N. Matsukawa

Selective polysilicon oxidation technology for VLSI isolation

N. Matsukawa, Hiroshi Nozawa, J. Matsunaga et al. · IEEE Transactions on Electron Devices · 1982 · 38 citations

Engineering, Vlsi Design, Field Isolation Technology +16

A hot hole-induced low-level leakage current in thin silicon dioxide films

N. Matsukawa, Shigeru Yamada, Kenta Amemiya et al. · IEEE Transactions on Electron Devices · 1996 · 30 citations

Electrical Engineering, Engineering, Physics +13

An EEPROM cell using a low barrier height tunnel oxide

Hiroshi Nozawa, N. Matsukawa, S. Morita · IEEE Transactions on Electron Devices · 1986 · 24 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

A new technique for measuring threshold voltage distribution in flash EEPROM devices

T. Himeno, N. Matsukawa, H. Hazama et al. · 2002 · 17 citations

Engineering, Mem Testing, Reliability Engineering +16

An experimental 5-V-only 256-kbit CMOS EEPROM with a high-performance single-polysilicon cell

J. Miyamoto, J. Tsujimoto, N. Matsukawa et al. · IEEE Journal of Solid-State Circuits · 1986 · 14 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +13