Ichiro Ohshima

Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node

S. Sugawa, Ichiro Ohshima, H. Ishino et al. · 2005 · 26 citations

Technology Node, Electrical Engineering, High-density Plasma +15

Tantalum nitride metal gate FD-SOI CMOS FETs using low resistivity self-grown bcc-tantalum layer

Hiroyuki Shimada, Ichiro Ohshima, T. Ushiki et al. · IEEE Transactions on Electron Devices · 2001 · 25 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS devices: an effect of self-sealing barrier configuration interposed between Ta and SiO/sub 2/

T. Ushiki, K. Kawai, Ichiro Ohshima et al. · IEEE Transactions on Electron Devices · 2000 · 17 citations

Materials Science, Electrical Engineering, Engineering +11

Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms

Ichiro Ohshima, Morito Akiyama, Akira Kakami et al. · Japanese Journal of Applied Physics · 2006 · 15 citations

Materials Science, Crystal Structure, Aluminium Nitride +15