R. Coquillé - Concepedia

Author

R. Coquillé

Centre Hospitalier Lannion Trestel

Also Known As

Coquille, R., R Coquille, R Coquillé, R. Coquille, R. Coquillé, R. coquillé

Publications

301

Citations

H-Index

Concepts

All Affiliations

Centre Hospitalier Lannion Trestel Centre National de la Recherche Scientifique Institut National des Sciences Appliquées de Toulouse Institut National des Sciences Appliquées de Lyon Laboratoire de physique des Solides

About

R. Coquillé is an author at Centre Hospitalier Lannion Trestel specializing in engineering, applied physics, and condensed matter physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	178
2	Applied Physics	7	7	129
3	Chemistry	3	3	63
4	Social Sciences	1	1	14
5	Electrical Engineering	1	1	34

R. Coquillé

Publications

197

Citations

H-Index

Page 1

	Year	Citations
Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements J. Y. Longère, K. Schohe, Stanisław Krawczyk, Journal of Applied Physics Various SuppliersEngineeringLuminescent GlassPhotoluminescence MeasurementsSemiconductors	1990	34
Synthesis, crystal growth and characterization of InP R. Coquillé, Y. Toudic, M. Gauneau, Journal of Crystal Growth Materials ScienceEngineeringCrystal Growth TechnologyChemistryCrystallography	1983	33
Thermal activation of glide in InP single crystals P. Gall, J.P. Peyrade, R. Coquillé, Acta Metallurgica EngineeringPhysicsCrystal MaterialThermal ActivationApplied Physics	1987	30
Growth of double doped semi-insulating indium phosphide single crystals Y. Toudic, R. Coquillé, M. Gauneau, Journal of Crystal Growth Materials ScienceCrystal Growth TechnologyEpitaxial Growth	1987	19
Properties of InP doped with 4d ions G. Brémond, A. Nouailhat, G. Guillot, Semiconductor Science and Technology Materials ScienceInorganic ChemistrySolid-state IonicParamagnetic ResonanceEngineering	1987	16
Comparison of twisted and parallel nematic liquid crystal polarisation controllers. Application to a 4 × 4 free space optical switch at 1.5 μm Frédéric Pain, R. Coquillé, Bruno Vinouze, Optics Communications PhotonicsOptical MaterialsEngineeringOptical PropertiesOptical Switching	1997	16
Transmission electron microscopy<i>in situ</i>investigation of dislocation mobilities in inp M. Zafrany, F. Voillot, J.P. Peyrade, Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties EngineeringSevere Plastic DeformationMicroscopyDislocation LengthKink Formation	1992	15
Deep levels related to Co in InP P. Rojo, P. Leyral, A. Nouailhat, Journal of Applied Physics Artificial IntelligenceOptical MaterialsCharge ExcitationsParamagnetic ResonanceEngineering	1984	14
Growth of low-dislocation semi-insulating InP(Fe, Ga) R. Coquillé, Y. Toudic, L. Haji, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringDislocation InteractionSevere Plastic Deformation	1987	10
Characterisation of semi-insulating InP:Fe B. Lambert, R. Coquillé, M. Gauneau, Semiconductor Science and Technology MagnetismEngineeringPhysicsHall Effect MeasurementsExperimental Analysis	1990	10

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