Properties of InP doped with 4d ions

Abstract

The authors have grown InP crystals doped with elements from the second long period (Nb, Mo, Ru, Rh and Pd) by the high-pressure gradient freeze method or by the liquid encapsulated Czochralski technique. Samples have been characterised electrically by Hall effect measurements and chemically analysed by spark source mass spectroscopy and secondary-ion mass spectrometry. They found the 4d impurities are introduced with a concentration of many 1015 cm-3. Nevertheless by spectroscopic measurements (electron paramagnetic resonance, photoluminescence and optical absorption) the authors have detected no lines which could be related to a ground or an excited state of the 4d impurity in isolated form.