Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements

Abstract

Room-temperature scanning photoluminescence (SPL) measurements were performed on Fe-doped semi-insulating InP wafers obtained from various suppliers. It was found that defects and inhomogeneities such as short- and long-range doping striations, dislocations, and subsurface extended defects are associated with specific ‘‘signatures’’ in SPL images, regardless of the origin of the samples. Because SPL measurements are fast and nondestructive, they appear to be useful for the evaluation of this material.