Doh-Y. Kim - Concepedia

Author

Doh-Y. Kim

Seoul National University

Also Known As

Doh-Y Kim, Doh-Y. Kim

Publications

513

Citations

H-Index

Concepts

All Affiliations

Seoul National University Korea Research Institute of Standards and Science Indian Institute of Technology Kharagpur Korea Advanced Institute of Science and Technology Korea Institute of Science and Technology

About

Doh-Y. Kim is an author at Seoul National University specializing in materials science, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	482
2	Applied Physics	11	11	422
3	Chemical Engineering	3	3	105
4	Chemistry	2	2	45
5	Natural Sciences	1	1	47

Doh-Y. Kim

Publications

482

Citations

H-Index

Page 1

	Year	Citations
Growth of silicon nanowires by chemical vapor deposition: approach by charged cluster model Nong‐Moon Hwang, W. S. Cheong, Duk Yong Yoon, Journal of Crystal Growth Materials ScienceSilicon NanowiresEngineeringCluster ModelNanomaterials	2000	74
Effect of methane concentration on size of charged clusters in the hot filament diamond CVD process In-D. Jeon, Chang J. Park, Doh-Y. Kim, Journal of Crystal Growth Materials ScienceMaterials EngineeringChemical EngineeringDiamond-like CarbonEngineering	2001	66
Deposition mechanism of gold by thermal evaporation: approach by charged cluster model Mark C. Barnes, Doh-Y. Kim, Hyo Suk Ahn, Journal of Crystal Growth Materials ScienceCluster ScienceEngineeringCluster ModelPhysics	2000	52
Experimental confirmation of charged carbon clusters in the hot filament diamond reactor Jn.-D Jeon, Chang J. Park, Doh-Y. Kim, Journal of Crystal Growth Materials ScienceDiamond-like CarbonExperimental ConfirmationEngineeringNuclear Physics	2000	47
Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure Rajat Mahapatra, Je‐Hun Lee, S. Maikap, Applied Physics Letters Strain-compensated Si0.69ge0.3c0.01 LayersEngineeringSigec FilmsThin Film Process TechnologySilicon On Insulator	2003	43
Abnormal grain growth by solid-state wetting along grain boundary or triple junction Nong‐Moon Hwang, Sung Bo Lee, Doh-Y. Kim Scripta Materialia Materials ScienceEngineeringSevere Plastic DeformationPhysicsAbnormal Grain Growth	2001	41
Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers Je‐Hun Lee, S. Maikap, Doh-Y. Kim, Applied Physics Letters Materials ScienceStrained-si0.74ge0.26 FilmsElectrical EngineeringEngineeringOxide Electronics	2003	32
Observation of carbon clusters of a few nanometers in the oxyacetylene diamond CVD process Hyo-S. Ahn, Hyun-M. Park, Doh-Y. Kim, Journal of Crystal Growth Materials ScienceDiamond-like CarbonChemical EngineeringEngineeringCarbon-based Material	2002	24
Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates S. Maikap, Je‐Hun Lee, Rajat Mahapatra, Solid-State Electronics Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringInterfacial Nh3/n2o-plasma Treatment	2005	23
Origin of positive charging of nanometer-sized clusters generated during thermal evaporation of copper In-D. Jeon, Mark C. Barnes, Doh-Y. Kim, Journal of Crystal Growth Materials ScienceCluster ScienceEngineeringNanoclusterNanomaterials	2002	21

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