Zihang Fang - Concepedia

Author

Zihang Fang

National University of Singapore ORCID

Also Known As

Fang, Zihang, Zihang Fang

Publications

160

Citations

H-Index

Concepts

All Affiliations

National University of Singapore

About

Zihang Fang is an author at National University of Singapore specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	4	4	108
2	Applied Physics	3	3	89
3	Social Sciences	1	1	19
4	Biomedical Engineering	1	1	19
5	Computer Engineering	1	1	19

Zihang Fang

Publications

139

Citations

H-Index

Page 1

	Year	Citations
Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor Shih-Hao Tsai, Zihang Fang, Xinghua Wang, ACS Applied Electronic Materials Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryPhase Change Memory	2022	45
First Demonstration of Ultra-low D<sub>it</sub> Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch Chun-Kuei Chen, Zihang Fang, Sonu Hooda, 2022 International Electron Devices Meeting (IEDM) Low-power ElectronicsRecord PerformanceElectrical EngineeringNon-volatile MemoryEngineering	2022	28
Low-Thermal-Budget BEOL-Compatible Beyond-Silicon Transistor Technologies for Future Monolithic-3D Compute and Memory Applications Aaron Thean, Shih-Hao Tsai, Chun-Kuei Chen, 2022 International Electron Devices Meeting (IEDM)	2022	20
N‐P Reconfigurable Dual‐Mode Memtransistors for Compact Bio‐Inspired Feature Extractor with Inhibitory‐Excitatory Spiking Capability Jin Feng Leong, Zihang Fang, Maheswari Sivan, Advanced Functional Materials Edge‐artificial IntelligenceEngineeringEmerging Memory TechnologyBiomedical EngineeringSynaptic Signaling	2023	19
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect Chun-Kuei Chen, Sonu Hooda, Zihang Fang, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2023	16
Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm I<sub>ON</sub> at V<sub>DS</sub> 1V, High µ-84 cm<sup>2</sup>/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing Umesh Chand, Mohamed M. Sabry Aly, Chun-Kuei Chen, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)	2022	11

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