E. Kohn

InGaP/InGaAs HFET with high current density and high cut-off frequencies

Dorin Geiger, E. Mittermeier, Jürgen Dickmann et al. · IEEE Electron Device Letters · 1995 · 43 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +14

0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz

A.N. Lepore, H. Levy, R. C. Tiberio et al. · Electronics Letters · 1988 · 37 citations

COLD-CATHODE ELECTRON EMISSION FROM SILICON

E. Kohn · Applied Physics Letters · 1971 · 33 citations

Electrical Engineering, Engineering, Physics +11

The silicon cold cathode

E. Kohn · IEEE Transactions on Electron Devices · 1973 · 27 citations

Semiconductors, Electrical Engineering, Electronic Devices +13

AN OPTOELECTRONIC COLD CATHODE USING AN Al<i>x</i>Ga1−<i>x</i>As HETEROJUNCTION STRUCTURE

H. Kressel, E. Kohn, H. Nelson et al. · Applied Physics Letters · 1970 · 24 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17