H. Nelson

Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase Epitaxy

H. Kressel, J. U. Dunse, H. Nelson et al. · Journal of Applied Physics · 1968 · 139 citations

Semiconductors, Semiconductor Technology, Liquid-phase Epitaxy +15

Evidence of Refrigerating Action by Means of Photon Emission in Semiconductor Diodes

G. C. Dousmanis, C.W. Mueller, H. Nelson et al. · Physical Review · 1964 · 120 citations

Optical Materials, Engineering, Heat Removal Rate +16

TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERS

G. C. Dousmanis, H. Nelson, D. L. Staebler · Applied Physics Letters · 1964 · 72 citations

Electrical Engineering, Semiconductor Device, Engineering +11

Control of Optical Losses in <i>p-n</i> Junction Lasers by Use of a Heterojunction: Theory and Experiment

H. Kressel, H. Nelson, F. Z. Hawrylo · Journal of Applied Physics · 1970 · 50 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +22

Electrical and Optical Properties of <i>n</i>-Type Si-Compensated GaAs Prepared by Liquid-Phase Epitaxy

H. Kressel, H. Nelson · Journal of Applied Physics · 1969 · 41 citations

Optical Materials, Engineering, Semiconductor Materials +17