Syunji Imanaga - Concepedia

Author

Syunji Imanaga

Fujitsu (Japan)

Also Known As

S Imanaga, S. Imanaga, Syunji Imanaga

Publications

487

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)Sony Corporation (United States)Sony (Taiwan)Sony Computer Science Laboratories

About

Syunji Imanaga is an author at Fujitsu (Japan) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	343
2	Applied Physics	11	12	248
3	Natural Sciences	6	6	138
4	Chemistry	5	5	173
5	Chemical Engineering	1	1	78

Syunji Imanaga

Publications

415

Citations

H-Index

Page 1

	Year	Citations
Charge transfer effects on the luminescent properties of Eu3+ in oxysulfides Takuya Hoshina, Syunji Imanaga, S. Yokono Journal of Luminescence Chemical EngineeringEngineeringPhotochemistryLuminescent GlassLuminescent Properties	1977	78
AlN/GaN insulated gate heterostructure FET withregrown <i>n</i> <sup>+</sup> GaN ohmic contact H. Kawai, Masaki Hara, Fumihiko Nakamura, Electronics Letters	1998	60
Luminescence Saturation Effects in Y<sub>2</sub>O<sub>2</sub>S: Eu Phosphor Syunji Imanaga, S. Yokono, Teruhiko Hoshina Japanese Journal of Applied Physics EngineeringLuminescence Saturation EffectsChemistryLuminescence PropertyElectronic Excited State	1980	41
Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control Syunji Imanaga, H. Kawai Journal of Applied Physics SemiconductorsCharge ControlElectrical EngineeringWide-bandgap SemiconductorEngineering	1997	36
Magnetic interaction between Co layers and Pd layers in Co/Pd multilayers Kaoru Miura, Hitoshi Kimura, Syunji Imanaga, Journal of Applied Physics Magnetic PropertiesEngineeringLow-dimensional MagnetismMagnetic ResonanceMagnetic Materials	1992	31
An AlN/GaN insulated gate heterostructure field effect transistor with regrown n+GaN source and drain contact H. Kawai, Masaki Hara, Fumihiko Nakamura, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	1998	19
Raman Spectra for Eu Doped Ln<sub>2</sub>O<sub>2</sub>S Phosphors S. Yokono, Syunji Imanaga, Teruhiko Hoshina Journal of the Physical Society of Japan Raman SpectraEngineeringSurface-enhanced Raman ScatteringChemistrySpectroscopic Property	1979	19
Excimer-laser annealed ohmic contacts to <i>n</i>-GaAs substrates through an ultrathin reacted layer Syunji Imanaga, H. Kawai, Kazuo Kajiwara, Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	1987	19
The Electronic Structure of One-Dimensional (1-D), 2-D, and 3-D Silicon Clusters Hitoshi Kimura, Syunji Imanaga, Yoshinori Hayafuji, Journal of the Physical Society of Japan Engineering3-D Silicon ClustersD OrbitalsComputational ChemistryChemistry	1993	18
Cooperative absorption in Eu2O2S Syunji Imanaga, S. Yokono, Takuya Hoshina Journal of Luminescence EngineeringCooperative AbsorptionNatural SciencesAtomic PhysicsAbsorption Spectroscopy	1978	17

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