AlN/GaN insulated gate heterostructure FET withregrown <i>n</i> ⁺ GaN ohmic contact

Abstract

An AlN/GaN insulated gate heterostructure FET is presented. An n+GaN channel is placed on a thick Al0.15Ga0.85N layer and is covered by a 4 nm thick AlN insulator layer. The FET has a threshold voltage of near 0 V. A Gm of 220 mS/mm for a 1.4 µm gate length was obtained.