T. Tsurushima - Concepedia

Author

T. Tsurushima

Also Known As

T Tsurushima, T. TSURUSHIMA, T. Tsurushima, TOSHIO TSURUSHIMA, Toshio TSURUSHIMA, Toshio Tsurushima, Toshio Tsurushima Toshio Tsurushima

Publications

550

Citations

H-Index

Concepts

All Affiliations

Kyushu University Electrotechnical Institute

About

T. Tsurushima is an author at Kyushu University specializing in engineering, applied physics, and crystalline defects.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	19	472
2	Applied Physics	14	18	440
3	Chemistry	8	8	190
4	Natural Sciences	7	7	156
5	Chemical Engineering	2	2	45

T. Tsurushima

Publications

489

Citations

H-Index

Page 1

	Year	Citations
ION-BOMBARDMENT-ENHANCED ETCHING OF SILICON J. F. Gibbons, E. Hechtl, T. Tsurushima Applied Physics Letters Materials ScienceMaterials EngineeringEtching CharacteristicsIon ImplantationEngineering	1969	43
Deep levels of vanadium and vanadium-hydrogen complex in silicon Taizoh Sadoh, H. Nakashima, T. Tsurushima Journal of Applied Physics SemiconductorsDeep LevelsElectronic MaterialsCrystalline DefectsEngineering	1992	43
Deep level of iron-hydrogen complex in silicon Taizoh Sadoh, Kazuyoshi Tsukamoto, Akira Baba, Journal of Applied Physics Materials ScienceSemiconductorsIon ImplantationMinority Carrier InjectionDeep Levels	1997	42
Spatial Distribution of Energy Deposited by Energetic Heavy Ions in Semiconductors T. Tsurushima, H. Tanoue Journal of the Physical Society of Japan EngineeringNuclear PhysicsNew General PrincipleIon ProcessSemiconductors	1971	41
Ion-beam modification of TiO2 film to multilayered photocatalyst T. Sumita, Hanae Otsuka, Hitoshi Kubota, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceEngineeringPhotochemistryPhotocatalysisCatalysis	1999	39
Niobium silicide formation induced by Ar-ion bombardment Toshihiko Kanayama, H. Tanoue, T. Tsurushima Applied Physics Letters Materials ScienceEnergetic Ar IonsIon ImplantationEngineeringCrystalline Defects	1979	36
Deep levels of chromium-hydrogen complexes in silicon Taizoh Sadoh, Masashi Watanabe, H. Nakashima, Journal of Applied Physics Semiconductor TechnologyInorganic ChemistryDeep LevelsEngineeringCrystalline Defects	1994	34
Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma Dawei Gao, Y. Kashiwazaki, K. Muraoka, Journal of Applied Physics EngineeringSi OxidePlasma ProcessingLow TemperatureChemical Engineering	1997	31
Electrical and thermal properties of structurally metastable iron-boron pairs in silicon H. Nakashima, Taizoh Sadoh, T. Tsurushima Physical review. B, Condensed matter EngineeringChemistrySilicon On InsulatorDefect ToleranceBorophene	1994	24
Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma H. Nakashima, Kuniyuki Furukawa, Y. C. Liu, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Thin Film PhysicsEngineeringElectron Cyclotron ResonanceThin Film Process TechnologyChemical Deposition	1997	24

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