Kirsch

Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

Huang, Majhi, Kirsch et al. · Symposium on VLSI Technology · 2009 · 14 citations

Engineering, Electrical Engineering, Materials Engineering +12

A high-performance quadruple well, quadruple poly BiCMOS process for fast 16 Mb SRAMs

Hayden, Taft, Pelley et al. · 1992 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17

Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

Oh, Ok, Loh et al. · Symposium on VLSI Technology · 2009 · 13 citations

Engineering, Electrical Engineering, Materials Science +15

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

。 Huang, Heh, Sivasubramani et al. · Symposium on VLSI Technology · 2009 · 13 citations

Engineering, Electrical Engineering, Materials Science +14