Majhi

Vth variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

Lee, Huang, Majhi et al. · Symposium on VLSI Technology · 2009 · 14 citations

Electrical Engineering, Engineering, Vlsi Design +9

Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

Oh, Ok, Kang et al. · Symposium on VLSI Technology · 2009 · 13 citations

Gate Stack, Electrical Engineering, Engineering +7

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

。 Huang, Heh, Sivasubramani et al. · Symposium on VLSI Technology · 2009 · 13 citations

Electrical Engineering, Engineering, Vlsi Design +9