Publication | Closed Access

Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, and orientation-dependent effective masses

Gate StackElectrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsOrientation-dependent Effective MassesMicroelectronicsComparative StudySemiconductor Device