Tillmann Krauss

CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors

Frank Wessely, Tillmann Krauss, Udo Schwalke · Solid-State Electronics · 2011 · 38 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +12

On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices

Mike Schwarz, Laurie E. Calvet, John P. Snyder et al. · IEEE Transactions on Electron Devices · 2017 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs

Frank Wessely, Tillmann Krauss, Udo Schwalke · Microelectronics Journal · 2012 · 29 citations

Engineering, Electrical Engineering, Microelectronics +11

Dopant-Free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications

Udo Schwalke, Tillmann Krauss, Frank Wessely · ECS Transactions · 2013 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +17

From MOSFETs to Ambipolar Transistors: Standard Cell Synthesis for the Planar RFET Technology

Maximilian Reuter, Johannes Pfau, Tillmann Krauss et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 2020 · 20 citations

Engineering, Computer Engineering, Electrical Engineering +17