Mike Schwarz

Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region

Thomas Holtij, Mike Schwarz, Alexander Kloes · Solid-State Electronics · 2013 · 61 citations

Device Modeling, Electrical Engineering, Semiconductor Device +9

$\hbox{MOS}^{3}$: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs

Alexander Kloes, Mike Schwarz, Thomas Holtij · IEEE Transactions on Electron Devices · 2012 · 38 citations

Device Modeling, Semiconductors, Electrical Engineering +14

On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices

Mike Schwarz, Laurie E. Calvet, John P. Snyder et al. · IEEE Transactions on Electron Devices · 2017 · 34 citations

Semiconductor Technology, Electrical Engineering, Engineering +15

Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

Mike Schwarz, Thomas Holtij, Alexander Kloes · Solid-State Electronics · 2012 · 31 citations

Device Modeling, Electrical Engineering, Engineering +6

2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage

Thomas Holtij, Mike Schwarz, Alexander Kloes · 2012 · 31 citations

Device Modeling, Electrical Engineering, Circuit Analysis +15