Thomas Holtij

Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs

Thomas Holtij, Michael Graef, Franziska Hain et al. · IEEE Transactions on Electron Devices · 2013 · 102 citations

Device Modeling, Analytical Compact Model, Electrical Engineering +12

Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region

Thomas Holtij, Mike Schwarz, Alexander Kloes · Solid-State Electronics · 2013 · 61 citations

Device Modeling, Electrical Engineering, Semiconductor Device +9

$\hbox{MOS}^{3}$: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs

Alexander Kloes, Mike Schwarz, Thomas Holtij · IEEE Transactions on Electron Devices · 2012 · 38 citations

Device Modeling, Semiconductors, Electrical Engineering +14

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current

Michael Graef, Thomas Holtij, Franziska Hain et al. · Microelectronics Journal · 2014 · 32 citations

Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

Mike Schwarz, Thomas Holtij, Alexander Kloes · Solid-State Electronics · 2012 · 31 citations

Device Modeling, Electrical Engineering, Engineering +6