P. Hirtz

Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD

Manijeh Razeghi, S. D. Hersee, P. Hirtz et al. · Electronics Letters · 1983 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Ga _<i>x</i> In _{1− <i>x</i>} As _<i>y</i> P _{1− <i>y</i>} /InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.

J.P. Hirtz, J.P. Duchemin, P. Hirtz et al. · Electronics Letters · 1980 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Donor-levels analysis in GaAlAs double heterostructure

B. Balland, G. Vincent, D. Bois et al. · Applied Physics Letters · 1979 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD

Manijeh Razeghi, P. Hirtz, J.P. Larivain et al. · Electronics Letters · 1981 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Spectroscopy of the deep levels in tin-doped Ga-Al-As

B. Balland, R. Blondeau, L. Mayet et al. · Thin Solid Films · 1980 · 18 citations

Natural Sciences, Materials Science, Physics +8