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Ga <sub> <i>x</i> </sub> In <sub> 1− <i>x</i> </sub> As <sub> <i>y</i> </sub> P <sub> 1− <i>y</i> </sub> /InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.

DOI

30

Citations

0

References

1980

Year

J.P. Hirtz, J.P. Duchemin, P. Hirtz, B. de Crémoux, T. P. Pearsall, Muriel Bonnet
Electronics Letters

Abstract

We report the first successful operation of a GaxIn1−xAsy P1−y/InP double heterostructure laser grown by low-pressure metalorganic chemical vapour deposition. This broad-area contact laser, emitting at 1.15 μm, has a threshold current density of 5.9 kA/cm2 at room temperature. The efficiency of photoluminescence and electroluminescence below laser threshold is comparable to that measured in structures grown by liquid-phase epitaxy.