Hengfang Zhang

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Hengfang Zhang, Olof Kordina, Jr‐Tai Chen et al. · Physica B Condensed Matter · 2019 · 14 citations

Materials Engineering, Materials Science, Aluminium Nitride +8

Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

Hengfang Zhang, Ingemar Persson, Jr.-Tai Chen et al. · Crystal Growth & Design · 2023 · 13 citations · Full text

Materials Engineering, Materials Science, Aluminium Nitride +15

On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Hengfang Zhang, Ingemar Persson, Alexis Papamichail et al. · Journal of Applied Physics · 2022 · 11 citations · Full text

Materials Science, Semiconductors, Polarity Domains +15

High-quality N-polar GaN optimization by multi-step temperature growth process

Hengfang Zhang, Tai C. Chen, Alexis Papamichail et al. · Journal of Crystal Growth · 2022 · 11 citations · Full text