Kenji Tsubaki

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Takayoshi Takano, Takuya Mino, Jun Sakai et al. · Applied Physics Express · 2017 · 544 citations

Engineering, Optical Properties, Nanoelectronics +16

222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi et al. · physica status solidi (a) · 2009 · 419 citations

Aluminium Nitride, Engineering, Optoelectronic Devices +18

Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs

Hideki Hirayama, Sachie Fujikawa, Jun Norimatsu et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 129 citations · Full text

Aluminium Nitride, Engineering, Optoelectronic Devices +19

Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy

R. Armitage, Kenji Tsubaki · Nanotechnology · 2010 · 107 citations

Electrical Engineering, Solid-state Lighting, Molecular-beam Epitaxy +15

Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates

Takuya Mino, Hideki Hirayama, Takayoshi Takano et al. · Applied Physics Express · 2011 · 34 citations

Aluminium Nitride, Electrical Engineering, Electronic Devices +11