Jun Norimatsu

222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi et al. · physica status solidi (a) · 2009 · 419 citations

Aluminium Nitride, Engineering, Optoelectronic Devices +18

Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs

Hideki Hirayama, Sachie Fujikawa, Jun Norimatsu et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 129 citations · Full text

Aluminium Nitride, Engineering, Optoelectronic Devices +19

Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates

Hideki Hirayama, Jun Norimatsu, Norimichi Noguchi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 29 citations

Materials Science, Aluminium Nitride, Electrical Engineering +13

222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template

Hideki Hirayama, Norimichi Noguchi, Sachie Fujikawa et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2009 · 20 citations

Aluminium Nitride, Optical Materials, Engineering +20

Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate

Akira Miyasaka, Jun Norimatsu, Keisuke Fukada et al. · Materials science forum · 2013 · 14 citations

Materials Engineering, Materials Science, Mm Sic Substrate +15