Zhaoxiang Wei

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

Jiaxing Wei, Zhaoxiang Wei, Hao Fu et al. · IEEE Transactions on Power Electronics · 2023 · 87 citations

Engineering, Sic Power Mosfets, Reliability Mechanisms +18

An Improved Small-Signal Equivalent Circuit for GaN High-Electron Mobility Transistors

Fengyi Huang, Xusheng Tang, Zhaoxiang Wei et al. · IEEE Electron Device Letters · 2016 · 29 citations

Extrinsic Inductance, Wide-bandgap Semiconductor, Electrical Engineering +9

High-Resolution Feature Generator for Small-Ship Detection in Optical Remote Sensing Images

Haopeng Zhang, Sizhe Wen, Zhaoxiang Wei et al. · IEEE Transactions on Geoscience and Remote Sensing · 2024 · 21 citations

1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect

Hao Fu, Zhaoxiang Wei, Siyang Liu et al. · Microelectronics Reliability · 2021 · 12 citations

Quasisaturation Effect and Optimization for 4H-SiC Trench MOSFET With P+ Shielding Region

Hao Fu, Jiaxing Wei, Zhaoxiang Wei et al. · IEEE Transactions on Electron Devices · 2021 · 10 citations