Sanghyeon Baeg

SRAM Interleaving Distance Selection With a Soft Error Failure Model

Sanghyeon Baeg, Shi-Jie Wen, Richard Wong · IEEE Transactions on Nuclear Science · 2009 · 139 citations

Engineering, Vlsi Design, Mem Testing +17

Low-Power Ternary Content-Addressable Memory Design Using a Segmented Match Line

Sanghyeon Baeg · IEEE Transactions on Circuits and Systems I Regular Papers · 2008 · 88 citations

Non-volatile Memory, Engineering, Memory Design +18

Resource-Efficient SRAM-Based Ternary Content Addressable Memory

Ali Ahmed, KyungBae Park, Sanghyeon Baeg · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2016 · 65 citations

Non-volatile Memory, Memory Architecture, Engineering +14

Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory

Zahid Ullah, Kim Ilgon, Sanghyeon Baeg · IEEE Transactions on Circuits and Systems I Regular Papers · 2012 · 64 citations

Non-volatile Memory, Content Addressable Memory, Engineering +12

Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology

Kyung‐Bae Park, C.K. Lim, Donghyuk Yun et al. · Microelectronics Reliability · 2015 · 63 citations

Root Cause Analysis, Electrical Engineering, Engineering +3