Donghyuk Yun

Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology

Kyung‐Bae Park, C.K. Lim, Donghyuk Yun et al. · Microelectronics Reliability · 2015 · 63 citations

Root Cause Analysis, Electrical Engineering, Engineering +3

Statistical distributions of row-hammering induced failures in DDR3 components

Kyung‐Bae Park, Donghyuk Yun, Sanghyeon Baeg · Microelectronics Reliability · 2016 · 37 citations

Reliability, Reliability Engineering, Engineering +5

Study of TID effects on one row hammering using gamma in DDR4 SDRAMs

Donghyuk Yun, Myungsang Park, C.K. Lim et al. · 2018 · 24 citations

Engineering, Nuclear Physics, Radiation Physics +19

Study of proton radiation effect to row hammer fault in DDR4 SDRAMs

C.K. Lim, Kyung‐Bae Park, Geunyong Bak et al. · Microelectronics Reliability · 2017 · 18 citations

Ddr4 Sdrams, Proton Radiation Effect, Nuclear Physics +1

Estimation of the Trap Energy Characteristics of Row Hammer-Affected Cells in Gamma-Irradiated DDR4 DRAM

Sanghyeon Baeg, Donghyuk Yun, Myungsun Chun et al. · IEEE Transactions on Nuclear Science · 2022 · 16 citations

Non-volatile Memory, Engineering, Memory Design +21