Iurii Kim

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Jori Lemettinen, Hironori Okumura, Iurii Kim et al. · Journal of Crystal Growth · 2018 · 45 citations · Full text

Materials Engineering, Materials Science, Aluminium Nitride +6

Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al_0.8Ga_0.2N/AlN on SiC With Drain Current Over 100 mA/mm

Jori Lemettinen, Nadim Chowdhury, Hironori Okumura et al. · IEEE Electron Device Letters · 2019 · 42 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Jori Lemettinen, Hironori Okumura, Iurii Kim et al. · Journal of Crystal Growth · 2018 · 30 citations · Full text

Materials Science, Materials Engineering, Layer Quality +10

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

Ritam Sarkar, Swagata Bhunia, Dhiman Nag et al. · Applied Physics Letters · 2019 · 22 citations · Full text

Wide-bandgap Semiconductor, Engineering, Mm Si Wafer +18

Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Heli Seppänen, Iurii Kim, Jarkko Etula et al. · Materials · 2019 · 18 citations · Full text