D. S. Wen

Defect annihilation in shallow <i>p</i>+ junctions using titanium silicide

D. S. Wen, P. L. Smith, C. M. Osburn et al. · Applied Physics Letters · 1987 · 104 citations

Semiconductors, Materials Science, Ion Implantation +11

Elimination of End‐of‐Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation

D. S. Wen, Peter Smith, C. M. Osburn et al. · Journal of The Electrochemical Society · 1989 · 36 citations

Materials Science, Defect Tolerance, Electrical Engineering +12

Tunneling leakage in Ge preamorphized shallow junctions

D. S. Wen, Scott H. Goodwin-Johansson, C. M. Osburn · IEEE Transactions on Electron Devices · 1988 · 24 citations

Shallow Junctions, Engineering, Ge Preamorphization +16

Effect of Na-Si co-doping on the performance of LiFePO4

Qingsheng Liu, D. S. Wen, Xiuyuan Yu et al. · Journal of Electroanalytical Chemistry · 2023 · 16 citations

Materials Engineering, Materials Science, Chemical Engineering +5

Silicon Consumption During Self-Aligned Titanium Suicide Formation on Shallow Junctions

P. L. Smith, C. M. Osburn, D. S. Wen et al. · MRS Proceedings · 1989 · 10 citations

Materials Science, Materials Engineering, Engineering +9