L. Leprince

Self-organized growth of regular nanometer-scale InAs dots on GaAs

J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 927 citations

Materials Science, Semiconductors, Strained Structures +14

Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

A. Ougazzaden, Y. Le Bellégo, E. V. K. Rao et al. · Applied Physics Letters · 1997 · 99 citations

Optical Materials, Engineering, Optoelectronic Devices +16

High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors

A. Ougazzaden, Elchuri Rao, B. Sermage et al. · Japanese Journal of Applied Physics · 1999 · 24 citations

Materials Engineering, Aluminium Nitride, High-quality Ingaasn Growth +15

<title>Spectroscopic studies of iron plasmas induced by continuous high-power CO2 laser</title>

D. Bermejo, R. Fabbro, L. Sabatier et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1990 · 17 citations

Engineering, Spectroscopic Studies, Laser-plasma Interaction +17

Observation of strain relaxation phenomena in buried and nonburied III–V surface gratings through high resolution x-ray diffraction

L. Leprince, G. T. Baumbach, A. Talneau et al. · Applied Physics Letters · 1997 · 15 citations

Materials Science, Materials Engineering, Surface Characterization +13