Ž. Gačević - Concepedia

Author

Ž. Gačević

Also Known As

E. Calleja, Gacevic, Zarko, Gačević, Ž., Z. Gacevic, Zarko Gacevic, Ž Gacěvić, Ž Gačević, Ž. Gačević, Žarko Gacevic, Žarko Gačević

Publications

775

Citations

H-Index

Concepts

All Affiliations

Universidad Politécnica de Madrid Universidad Complutense de Madrid Universitat de Barcelona Otto-von-Guericke University Magdeburg Universidad Autónoma de Madrid

ŽG

About

Ž. Gačević is an author at Universidad Politécnica de Madrid specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	17	557
2	Applied Physics	14	17	557
3	Electrical Engineering	5	5	143
4	Chemistry	1	1	25
5	Materials Engineering	1	1	40

Ž. Gačević

Publications

692

Citations

H-Index

Page 1

	Year	Citations
Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy Ž. Gačević, D. Gómez, E. Calleja Nano Letters Wide-bandgap SemiconductorEngineeringSemiconductor NanostructuresNanoelectronicsGan Nanowires Grown	2015	108
Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy Ž. Gačević, Aparna Das, J. Teubert, Journal of Applied Physics Materials ScienceInternal Quantum EfficiencyPhotoluminescenceEngineeringQd Superlattices	2011	70
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires Ž. Gačević, Mark Holmes, Ekaterina Chernysheva, ACS Photonics Quantum PhotonicsEngineeringPolar SectionsPencil-like Ingan/gan NanowiresSemiconductor Nanostructures	2017	50
A comprehensive diagram to grow InAlN alloys by plasma-assisted\n molecular beam epitaxy Sergio Fernández‐Garrido, Ž. Gačević, E. Calleja arXiv (Cornell University)	2024	47
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy Ž. Gačević, Víctor J. Gómez, Noemí García Lepetit, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringComprehensive DiagramApplied Physics	2012	40
Intraband absorption in InAs/GaAs quantum dot infrared photodetectors—effective mass versus<i>k</i>×<i>p</i>modelling Nenad Vukmirović, Ž. Gačević, Z. Ikonić, Semiconductor Science and Technology Categoryquantum ElectronicsOptical MaterialsEngineeringEffective MassOptoelectronic Devices	2006	39
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy Ž. Gačević, Sergio Fernández‐Garrido, José Manuel Rebled, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorEngineeringPhysics	2011	32
A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control Ž. Gačević, D. López‐Romero, T. Juan Mangas, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2016	31
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells A. D. Utrilla, D.F. Reyes, J. M. Llorens, Solar Energy Materials and Solar Cells Ii-vi SemiconductorElectrical EngineeringImproved PerformanceEngineeringQuantum Dots	2016	29
Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence Electron Energy Loss Spectroscopy Alberto Eljarrat, Sònia Estradé, Ž. Gačević, Microscopy and Microanalysis	2012	27

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