A comprehensive diagram to grow InAlN alloys by plasma-assisted\n molecular beam epitaxy

Abstract

Indium incorporation and surface morphology of InAlN layers grown on\n(0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a\nfunction of the impinging In flux and the substrate temperature in the\n450-610$^{\\circ}$C range. In incorporation was found to decrease with substrate\ntemperature due to thermal decomposition of the growing layer, while for a\ngiven temperature it increased with the impinging In flux until stoichiometry\nwas reached at the growth front. The InN losses during growth followed an\nArrhenius behaviour characterized by an activation energy of 2.0 eV. A growth\ndiagram highly instrumental to identify optimum growth conditions was\nestablished.\n