J.W. Graff

Low-resistance ohmic contacts to <i>p</i>-type GaN

Y. -L. Li, E. Fred Schubert, J.W. Graff et al. · Applied Physics Letters · 2000 · 89 citations

Materials Science, Semiconductors, Electrical Engineering +12

Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices

E. L. Waldron, J.W. Graff, E. Fred Schubert · Applied Physics Letters · 2001 · 68 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Omnidirectional reflective contacts for light-emitting diodes

Th. Gessmann, E. Fred Schubert, J.W. Graff et al. · IEEE Electron Device Letters · 2003 · 59 citations

White Oled, Photonics, Electrical Engineering +13

Ohmic contacts to <i>p</i>-type GaN mediated by polarization fields in thin InxGa1−xN capping layers

Th. Gessmann, Y.-L. Li, E. L. Waldron et al. · Applied Physics Letters · 2002 · 58 citations

Materials Science, Polarization Fields, Electrical Engineering +11

Ohmic contact technology in III nitrides using polarization effects of cap layers

Th. Gessmann, J.W. Graff, Y.-L. Li et al. · Journal of Applied Physics · 2002 · 36 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16