E. L. Waldron

Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices

E. L. Waldron, J.W. Graff, E. Fred Schubert · Applied Physics Letters · 2001 · 68 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Ohmic contacts to <i>p</i>-type GaN mediated by polarization fields in thin InxGa1−xN capping layers

Th. Gessmann, Y.-L. Li, E. L. Waldron et al. · Applied Physics Letters · 2002 · 58 citations

Materials Science, Polarization Fields, Electrical Engineering +11

P-type conductivity in bulk AlxGa1−xN and AlxGa1−xN/AlyGa1−yN superlattices with average Al mole fraction &amp;gt;20%

J. K. Kim, E. L. Waldron, Y.-L. Li et al. · Applied Physics Letters · 2004 · 40 citations · Full text

Materials Engineering, Materials Science, Superconducting Material +12

Ohmic contact technology in III nitrides using polarization effects of cap layers

Th. Gessmann, J.W. Graff, Y.-L. Li et al. · Journal of Applied Physics · 2002 · 36 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Experimental study of perpendicular transport in weakly coupled AlxGa1−xN/GaN superlattices

E. L. Waldron, Y.-L. Li, E. Fred Schubert et al. · Applied Physics Letters · 2003 · 22 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +9