TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

J. Kouvetakis, J. Menéndez, A. V. G. Chizmeshya

Annual Review of Materials Research

Optical MaterialsEngineeringOptoelectronic DevicesElectronic PropertiesSilicon On Insulator +15

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Gordon Grzybowski, Richard T. Beeler, Liying Jiang, +3

Applied Physics Letters

Materials EngineeringMaterials ScienceNext GenerationEngineeringMaterial Analysis +13

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

Radek Roucka, Jay Mathews, Richard T. Beeler, +3

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringOptical MaterialsElectronic Devices +13

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−<i>y</i>Sn<i>y</i> alloys

James Gallagher, Charutha Senaratne, J. Kouvetakis, +1

Applied Physics Letters

Optical MaterialsEngineeringSpectroscopic PropertyCompositional DependenceOptical Properties +17

Optical and structural properties of SixSnyGe1−x−y alloys

P. Aella, C. Cook, J. Tolle, +3

Applied Physics Letters

Optical MaterialsEngineeringCrystal Growth TechnologySemiconductorsSingle-phase Sixsnyge1−x−y +14

Formation of a Tetrameric, Cyclooctane-like, Azidochlorogallane, [HClGaN₃]₄, and Related Azidogallanes. Exothermic Single-Source Precursors to GaN Nanostructures

Jeff McMurran, J. Kouvetakis, David C. Nesting, +2

Journal of the American Chemical Society

Materials ScienceInorganic ChemistryInorganic SynthesisEngineeringExothermic Single-source Precursors +11

Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3

Peter A. Crozier, J. Tolle, J. Kouvetakis, +1

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringElectron NanolithographySemiconductor NanostructuresBeam Lithography +17

SnGe superstructure materials for Si-based infrared optoelectronics

Maret Bauer, C. Cook, P. Aella, +6

Applied Physics Letters

Materials ScienceMaterials EngineeringOptical MaterialsEngineeringOptoelectronic Materials +10

Ge 1 − y Sn y photoconductor structures at 1.55μm: From advanced materials to prototype devices

Radek Roucka, Ju-Jun Xie, J. Kouvetakis, +5

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator +16

Synthesis and Structural Properties of the Binary Framework C–N Compounds of Be, Mg, Al, and Tl

D.J. Williams, Brett Pleune, Kurt Leinenweber, +1

Journal of Solid State Chemistry

Materials ScienceInorganic ChemistryChemical EngineeringStructural PropertiesEngineering +3