J. Kouvetakis

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

J. Kouvetakis, J. Menéndez, A. V. G. Chizmeshya · Annual Review of Materials Research · 2006 · 247 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Gordon Grzybowski, Richard T. Beeler, Liying Jiang et al. · Applied Physics Letters · 2012 · 99 citations

Materials Engineering, Materials Science, Next Generation +15

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

Radek Roucka, Jay Mathews, Richard T. Beeler et al. · Applied Physics Letters · 2011 · 94 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−<i>y</i>Sn<i>y</i> alloys

James Gallagher, Charutha Senaratne, J. Kouvetakis et al. · Applied Physics Letters · 2014 · 93 citations · Full text

Optical Materials, Engineering, Spectroscopic Property +19

Optical and structural properties of SixSnyGe1−x−y alloys

P. Aella, C. Cook, J. Tolle et al. · Applied Physics Letters · 2004 · 85 citations

Optical Materials, Engineering, Crystal Growth Technology +16