Gordon Grzybowski

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Gordon Grzybowski, Richard T. Beeler, Liying Jiang et al. · Applied Physics Letters · 2012 · 99 citations

Materials Engineering, Materials Science, Next Generation +15

Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics

Justin W. Cleary, Evan M. Smith, Kevin Leedy et al. · Optical Materials Express · 2018 · 86 citations · Full text

Materials Science, Photonic Device, Electrical Engineering +15

Direct versus indirect optical recombination in Ge films grown on Si substrates

Gordon Grzybowski, Radek Roucka, Jay Mathews et al. · Physical Review B · 2011 · 72 citations · Full text

Compositional dependence of the absorption edge and dark currents in Ge1−<i>x</i>−<i>y</i>Si<i>x</i>Sn<i>y</i>/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

Richard T. Beeler, Chi Xu, David J. Smith et al. · Applied Physics Letters · 2012 · 37 citations

Optical Materials, Engineering, Direct Band Gap +20

Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge₃H₈, Ge₄H₁₀)

Gordon Grzybowski, Liying Jiang, Richard T. Beeler et al. · Chemistry of Materials · 2012 · 36 citations