Kazuaki Takai

Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic device

Tatsuya Yamazaki, Ken‐ichi Inoue, Hiroyuki Miyazawa et al. · 2002 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +9

Influence of Electrode Contacts on Leakage Current of SrTiO₃ Capacitors

Tetsuro Tamura, Kazuaki Takai, Hideyuki Noshiro et al. · Japanese Journal of Applied Physics · 1994 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +15

An 8-Mbit 0.18-µm CMOS 1T1C FeRAM in Planar Technology

Shoichiro Kawashima, M. Nakazawa, Kazuaki YAMANE et al. · IEICE Transactions on Electronics · 2015 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +10

Control of La-doped Pb(Zr,Ti)O₃crystalline orientation and its influence on the properties of ferroelectric random access memory

Wensheng Wang, Kenji Nomura, Hideshi Yamaguchi et al. · Japanese Journal of Applied Physics · 2017 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +17

Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO <i> _x </i> bottom electrode for the La-doped Pb(Zr,Ti)O ₃ ferroelectric capacitor

Kenji Nomura, Wensheng Wang, Hideshi Yamaguchi et al. · Japanese Journal of Applied Physics · 2018 · 11 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15