J. Behrend - Concepedia

Author

J. Behrend

Paul Drude Institute for Solid State Electronics

Also Known As

J Behrend, J. BEHREND, J. Behrend, Jorg Behrend, Jörg Behrend, Jörg Behrend

Publications

802

Citations

H-Index

Concepts

All Affiliations

Paul Drude Institute for Solid State Electronics University of Cologne Technische Universität Berlin École Polytechnique Fédérale de Lausanne Justus-Liebig-Universität Gießen

About

J. Behrend is an author at Paul Drude Institute for Solid State Electronics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	20	605
2	Applied Physics	14	16	398
3	Natural Sciences	5	5	235
4	Education	1	1	13
5	Chemical Engineering	1	1	25

J. Behrend

Publications

692

Citations

H-Index

Page 1

	Year	Citations
Interactive Loomis-Wood assignment programs Brenda P. Winnewisser, Jürgen Reinstädtler, Kōichi Yamada, Journal of Molecular Spectroscopy Mathematical ProgrammingGeometric ModelingComputational ScienceEngineeringGeometric Algorithm	1989	159
Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs H. Yang, O. Brandt, M. Wassermeier, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	1996	59
Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) J.‐T. Zettler, J. Rumberg, K. Ploska, physica status solidi (a) Optical MaterialsEngineeringCrystal Growth TechnologyMbe GrowthSemiconductor Nanostructures	1995	43
Domain formation on the reconstructed GaAs(001) surface J. Behrend, M. Wassermeier, L. Däweritz, Surface Science EngineeringPhysicsApplied PhysicsDomain FormationCategoryiii-v Semiconductor	1995	36
Spectra of deuterated disulfane and spectroscopic determination of its molecular structure J. Behrend, P. Mittler, G. Winnewisser, Journal of Molecular Spectroscopy Molecular SpectroscopySpectroscopic DeterminationNatural SciencesSpectroscopySpectra-structure Correlation	1991	35
Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy R. Hey, M. Wassermeier, J. Behrend, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringPhysicsOptical Properties	1995	30
Wafer fused p-InP/p-GaAs heterojunctions F. Salomonsson, K. Streubel, Jonas Bentell, Journal of Applied Physics Electrical EngineeringEngineeringFused InterfaceApplied PhysicsSemiconductor Material	1998	30
Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy J.‐F. Carlin, A. Syrbu, C.-A. Berseth, Applied Physics Letters Materials SciencePhotonicsOptical MaterialsEngineeringLaser Science	1997	30
Reconstruction of the GaAs(001) surface induced by submonolayer Si deposition M. Wassermeier, J. Behrend, L. Däweritz, Physical review. B, Condensed matter EngineeringMicroscopySilicon On InsulatorSemiconductor DeviceNanoelectronics	1995	29
InGaAs/InGaAsP/InP edge emitting laser diodes on <i>p</i> -GaAs substrates obtained by localised wafer fusion A. Syrbu, J. Fernandez, J. Behrend, Electronics Letters	1997	27

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