J. Hewett

Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

Ralf B. Wehrspohn, S. C. Deane, I. D. French et al. · Journal of Applied Physics · 2000 · 150 citations

Engineering, Relative Importance, Bond Defect Creation +16

Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures

C. T. Foxon, J. J. Harris, David Hilton et al. · Semiconductor Science and Technology · 1989 · 106 citations

Materials Science, Electrical Engineering, Ultralow Density +14

Two-dimensional electron gas structures with mobilities in excess of 3×106 cm2 V−1 s−1

J. J. Harris, C. T. Foxon, K.W.J. Barnham et al. · Journal of Applied Physics · 1987 · 56 citations

Undoped Spacer Thickness, Engineering, Electronic Structure +20

Minority carrier lifetime in <i>n</i>-type Bridgman grown Hg1−<i>x</i>Cd<i>x</i>Te

Ronald G. Pratt, J. Hewett, P. Capper et al. · Journal of Applied Physics · 1983 · 53 citations

Semiconductors, Ii-vi Semiconductor, Electronic Devices +14

Minority-carrier lifetime in doped and undoped <i>n</i>-type Cd<i>x</i>Hg1−<i>x</i>Te

Ronald G. Pratt, J. Hewett, P. Capper et al. · Journal of Applied Physics · 1986 · 43 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +12