S. Schwantes

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

S. Schwantes, T. Florian, Thompson Stephan et al. · IEEE Transactions on Electron Devices · 2005 · 35 citations

Low-power Electronics, Electrical Engineering, Semiconductor Device +9

Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal–oxide–semiconductor field-effect transistors

A. Avellán, Wolfgang H. Krautschneider, S. Schwantes · Applied Physics Letters · 2001 · 20 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +10

Relevance of Gate Current for the Functionality of Deep Submicron CMOS Circuits

S. Schwantes, Wolfgang H. Krautschneider · 2001 · 14 citations

Electrical Engineering, Engineering, Vlsi Design +6

Analysis of the back gate effect on the breakdown behaviour of SOI LDMOS transistors

S. Schwantes, T. Florian, M. Gräf et al. · 2004 · 11 citations

Electrical Engineering, Engineering, Breakdown Behaviour +14