E.P. Carlson

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

T. W. Weeks, M. D. Bremser, K. S. Ailey et al. · Applied Physics Letters · 1995 · 249 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +10

Pendeoepitaxy of gallium nitride thin films

K. J. Linthicum, Thomas Gehrke, Darren B. Thomson et al. · Applied Physics Letters · 1999 · 178 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +16

Optical activation of Be implanted into GaN

Carsten Ronning, E.P. Carlson, Darren B. Thomson et al. · Applied Physics Letters · 1998 · 63 citations

Photonics, Single Crystalline, Optical Materials +15

Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis <i>α</i>(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy

T. W. Weeks, M. D. Bremser, K. S. Ailey et al. · Journal of materials research/Pratt's guide to venture capital sources · 1996 · 54 citations

Materials Science, Semiconductors, Aluminium Nitride +7

Ion implantation of epitaxial GaN films: damage, doping and activation

N.R. Parikh, A. Suvkhanov, Mike Lioubtchenko et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 44 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +5