Lou N. Hutter

16-60 V rated LDMOS show advanced performance in a 0.72 μm evolution BiCMOS power technology

Chin-Yu Tsai, T. Efland, S. Pendharkar et al. · 2002 · 28 citations

Engineering, Electrical Engineering, Electronic Materials +11

A performance comparison between new reduced surface drain "RSD" LDMOS and RESURF and conventional planar power devices rated at 20 V

T. Efland, Chin-Yu Tsai, J. Erdeljac et al. · 2002 · 18 citations

Engineering, Electrical Engineering, Power Electronics +8

A highly manufacturable 0.25μm RF technology utilizing a unique SiGe integration

F.S. Johnson, J. Ai, S. Thomas Dunn et al. · 2002 · 13 citations

Engineering, Electrical Engineering, Low-power Design +16

A versatile 30V analog CMOS process in a 0.18μm technology for power management application

Yong-Keon Choi, Il-Yong Park, Hyun-Chol Lim et al. · 2011 · 11 citations

Engineering, Electrical Engineering, Analog Electronics +13

Implementation of fully isolated Low Vgs nLDMOS with low specific on-resistance

Choul-Joo Ko, Cheol-Ho Cho, Minseok Kim et al. · 2011 · 11 citations

Engineering, Electrical Engineering, Microelectronics +14