A highly manufacturable 0.25μm RF technology utilizing a unique SiGe integration

Abstract

A new SiGe integration technique is introduced that allows the low cost integration of a self-aligned 65 GHz SiGe heterojunction bipolar transistor (HBT) with a 0.55dB noise figure (NF) using simple processing steps and a non-selective SiGe epitaxy deposition. The integration technique is presented as part of a 0.25/spl mu/m production RF technology that includes SiGe NPNs, 14GHz PNPs, very high Q passives, high resistance substrates, drain-extended CMOS (DEMOS) and fully isolated CMOS wells. In addition to component characterization, measurements of fabricated WCDMA circuits are presented that demonstrate low power, low noise circuit operation.