A performance comparison between new reduced surface drain "RSD" LDMOS and RESURF and conventional planar power devices rated at 20 V

Abstract

This work presents a new reduced-surface-drain (RSD) type of LDMOS in comparison with very thin RESURF (VTR) and conventional (CONV) devices for 20 V BiCMOS market applications. Competitive performance results obtained for the RSD, VTR and CONV devices are respectively R/sub sp/=0.39 m/spl Omega//spl middot/cm/sup 2/ BV=24.4 V; R/sub sp/=0.30 mn/spl Omega//spl middot/cm/sup 2/, BV=25 V; R/sub sp/=0.59 m/spl Omega//spl middot/cm/sup 2/, BV=18-20 V. All R/sub sp/, measurements are with 3 MV/cm gate stress(V/sub gs/=12.75 V, Tox=425 /spl Aring/).