Eiji Yagyu

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Koon Hoo Teo, Yuhao Zhang, Nadim Chowdhury et al. · Journal of Applied Physics · 2021 · 260 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +17

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Takuma Nanjo, Akifumi Imai, Yosuke Suzuki et al. · IEEE Transactions on Electron Devices · 2013 · 130 citations

Wide-bandgap Semiconductor, Algan Channel Hemt, Electrical Engineering +11

Mode-evolution-based polarization rotator-splitter design via simple fabrication process

Wangqing Yuan, Keisuke Kojima, Bingnan Wang et al. · Optics Express · 2012 · 38 citations · Full text

Photonics, Electrical Engineering, Optical Materials +13

Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

Takuma Nanjo, Tsukasa Motoya, Akihumi Imai et al. · Japanese Journal of Applied Physics · 2011 · 35 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes

E. Ishimura, Eiji Yagyu, Masaharu Nakaji et al. · Journal of Lightwave Technology · 2007 · 34 citations

Electrical Engineering, Engineering, Degradation Mode Analysis +10