Siao-Cheng Yan

High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

Siao-Cheng Yan, Guan-Min Lan, Chong-Jhe Sun et al. · IEEE Electron Device Letters · 2021 · 64 citations

Non-volatile Memory, Electrical Engineering, Engineering +15

Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

Meng‐Ju Tsai, Kang-Hui Peng, Chong-Jhe Sun et al. · IEEE Journal of the Electron Devices Society · 2019 · 41 citations · Full text

Engineering, Gate Controllability, Integrated Circuits +17

Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I_ON/I_OFF Ratio

Chong-Jhe Sun, Meng‐Ju Tsai, Siao-Cheng Yan et al. · IEEE Journal of the Electron Devices Society · 2020 · 16 citations · Full text

Electrical Engineering, Engineering, Microfabrication +10

Multilevel Cell Ferroelectric HfZrO FinFET With High Speed and Large Memory Window Using AlON Interfacial Layer<sub/>

Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun et al. · IEEE Electron Device Letters · 2022 · 14 citations

Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

Yi-Wen Lin, Hao‐Hsiang Chang, Y.W. Huang et al. · IEEE Electron Device Letters · 2021 · 11 citations