1c:I[776865,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"Grid"] 1d:I[617291,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"GridCol"] 1e:I[734616,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"Avatar"] 1f:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 20:T4b6,We propose that the use of tightly stacked three-dimensional (3D) diamond-shaped Ge nanowire (NW) gate-all-around field-effect transistor (Ge-NW GAAFET) is a feasible approach to continuous scaling. The proposed devices with the Al₂O₃ dielectric exhibit high I_SAT of 1200

$\boldsymbol {\mu } \text{A}/\boldsymbol {\mu } \text{m}$

(pFET) and 1100

$\boldsymbol {\mu } \text{A}/\boldsymbol {\mu } \text{m}$

(nFET), high I_ON/I_OFF ratio of approximately

${1} \times {10}^{{5}}$

, and steep subthreshold swing (SS) close to 70mV/dec. Superior gate control of the Ge-NW GAAFET was confirmed by the 3D TCAD simulation for the sub-3nm node applications. The formation of the tightly stacked Ge NWs is fully compatible with the complementary metal oxide semiconductor (CMOS) technology platform using only alternating isotropic and anisotropic dry etching, thus showing promising potential for extending CMOS scaling in the vertical direction.21:T44c,This paper reports a self-induced ferroelectric 2-nm-thick Ge-doped HfO2 (Ge:HfO2) thin film. Ge thermal desorption, incorporation into HfO2, and further Ge:HfO2 crystallization were all performed through rapid thermal annealing simultaneously. The ferroelectric property of a 2-nm-thick Ge:HfO2/2-nm-thick Al2O3 dielectric stack was confirmed using the polarization-electric field measurement. X-ray photoelectron spectroscopy was used to confirm that Ge bonded to HfO2 as Hf-germanates. Piezoresponse force microscopy was used to demonstrat

	Year	Citations

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