J. J. Bucchignano

Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography

K. Liu, Phaedon Avouris, J. J. Bucchignano et al. · Applied Physics Letters · 2002 · 181 citations

Materials Science, Electrical Engineering, Electromigration Technique +15

Resistance anomaly near the superconducting transition temperature in short aluminum wires

P. Santhanam, C. C., Shalom J. Wind et al. · Physical Review Letters · 1991 · 127 citations

Superconducting Material, Engineering, Critical Currents +21

High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation

Yi Sun, E. Kiewra, J. P. de Souza et al. · IEEE Electron Device Letters · 2008 · 107 citations

Semiconductor Technology, Gate Dielectrics, Electrical Engineering +9

High performance 0.1 μm CMOS devices with 1.5 V power supply

Y. Taur, Shalom J. Wind, Y. J. Mii et al. · 2002 · 92 citations

Low-power Electronics, High Performance 0.1, Electrical Engineering +12

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Dense Circuit Layouts, Electrical Engineering, Physical Design (Electronics) +11