Yat Hon Ng

A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management

Yuxiao Wang, Uma Bhattacharya, Fatih Hamzaoglu et al. · 2009 · 41 citations

Engineering, Vlsi Design, Emerging Memory Technology +18

Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC

Sirui Feng, Zheyang Zheng, Yan Cheng et al. · Advanced Materials · 2022 · 39 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

RF Enhancement-Mode <i>p</i>-GaN Gate HEMT on 200 mm-Si Substrates

Yan Cheng, Yat Hon Ng, Zheyang Zheng et al. · IEEE Electron Device Letters · 2022 · 35 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs

Li Zhang, Zheyang Zheng, Yan Cheng et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 34 citations · Full text

Enhanced Stability, Wide-bandgap Semiconductor, Electrical Engineering +13

A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications

Yuxiao Wang, Jiefeng Lin, Yat Hon Ng et al. · 2007 · 31 citations

Engineering, Vlsi Design, Emerging Memory Technology +20