Muhammad Fahlesa Fatahilah

3D GaN nanoarchitecture for field-effect transistors

Muhammad Fahlesa Fatahilah, Klaas Strempel, Yu Feng et al. · Micro and Nano Engineering · 2019 · 51 citations · Full text

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

Muhammad Fahlesa Fatahilah, Yu Feng, Klaas Strempel et al. · Scientific Reports · 2019 · 39 citations · Full text

Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math> </inline-formula>-GaN Channel

Yu Feng, Klaas Strempel, Muhammad Fahlesa Fatahilah et al. · IEEE Transactions on Electron Devices · 2018 · 37 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Highly stable threshold voltage in GaN nanowire FETs: The advantages of <i>p</i>-GaN channel/Al2O3 gate insulator

Maria Ruzzarin, Carlo De Santi, Yu Feng et al. · Applied Physics Letters · 2020 · 23 citations

Electrical Engineering, Engineering, Physics +14

Traceable Nanomechanical Metrology of GaN Micropillar Array

Muhammad Fahlesa Fatahilah, Prabowo Puranto, Yu Feng et al. · Advanced Engineering Materials · 2018 · 15 citations

Micropillar Arrays, Engineering, Microscopy +20