Renata Butkutė

Multi‐quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

Renata Butkutė, Andrejus Geižutis, V. Pačebutas et al. · Electronics Letters · 2014 · 63 citations

Qw Structures, Engineering, Laser Applications +16

Magnetoresistant La1−xSrxMnO3 films by pulsed injection metal organic chemical vapor deposition: effect of deposition conditions, substrate material and film thickness

A. Abrutis, Valentina Plaušinaitienė, V. Kubilius et al. · Thin Solid Films · 2002 · 51 citations

Materials Science, Magnetism, Materials Engineering +13

Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2

E. Kamińska, A. Piotrowska, J. Kossut et al. · Solid State Communications · 2005 · 50 citations

Materials Engineering, Materials Science, Engineering +6

Structure and Optical Properties of InGaAsBi with up to 7% Bismuth

J. Devenson, V. Pačebutas, Renata Butkutė et al. · Applied Physics Express · 2012 · 41 citations

Optical Materials, Engineering, Optoelectronic Devices +16

p‐type conducting ZnO: fabrication and characterisation

E. Kamińska, A. Piotrowska, J. Kossut et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2005 · 39 citations

Materials Science, Semiconductors, Electrical Engineering +13